Method and apparatus to improve reliability of vias

ABSTRACT

In a disclosed embodiment, a method for tiling selected vias in a semiconductor device having a plurality of vias comprises generating a layout database for the semiconductor device; creating zones around the plurality of vias; measuring density of covering metal in each zone; selecting a low density zone as being a zone that has a metal density less than a threshold metal density; and adding at least one tiling feature on a metal layer above the plurality of vias in the low density zone so that metal density of the low density zone increases to at least the same as the threshold metal density.

BACKGROUND

1. Field

This disclosure relates generally to semiconductor processing, and moreparticularly, to improving reliability of vias.

2. Related Art

Integrated circuits are formed with metal layers stacked on top of oneanother and dielectric layers between the metal layers to insulate themetal layers from each other. Normally, each metal layer has anelectrical contact to at least one other metal layer. Electrical contactcan be formed by etching a hole (i.e., a via) in the interlayerdielectric that separates the metal layers, and filling the resultingvia with a metal to create an interconnect. A “via” normally refers toany recessed feature such as a hole, line or other similar featureformed within a dielectric layer that, when filled with a conductivematerial, provides an electrical connection through the dielectric layerto a conductive layer underlying the dielectric layer.

With the number of transistors that are now present on integratedcircuits, the number of vias can exceed a billion and there can be tenor more different conductive layers. Even if each via is highlyreliable, there are so many vias that it is likely for there to be atleast one via failure. Low-k BEOL (Back-End of Line) interlayerdielectrics commonly used in advanced technology integrated circuitmanufacturing can have trapped moisture and hydroxyl ions. These trappedwater species pose a risk of oxidizing via barrier material if notsufficiently out-gassed. Vias with oxidized tantalum barriers exhibitexcessive via resistance that has been shown to cause timing delays insemiconductor devices. A barrier material is used to contain themigration of a copper used for a metal layer through the insulatingmaterial.

Barrier materials typically used today are a combination of tantalum andtantalum nitride, or just tantalum. Tantalum nitride has good adhesionproperties to the oxide dielectric. However, other materials can beused. One problem which is specifically worse for tantalum is thattantalum oxidizes to form tantalum pentoxide and expands to a volumewhich is several times larger than just the tantalum. Also, the tantalumpentoxide is an insulator and has very high resistance.

Accordingly, it is desirable to provide a technique for improving thereliability of vias and uniformity of via resistance.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is illustrated by way of example and is notlimited by the accompanying figures, in which like references indicatesimilar elements. Elements in the figures are illustrated for simplicityand clarity and have not necessarily been drawn to scale.

FIG. 1 is a flow diagram of an embodiment of a process for determiningwhere to add metal tiles around one or more vias to improve reliabilityof a semiconductor device.

FIG. 2 is a top view of an embodiment of a partial layout of asemiconductor device during a first stage of design.

FIG. 3 is a top view of the semiconductor device of FIG. 2 during asubsequent stage of design.

FIG. 4 is a top view of the semiconductor device of FIG. 3 during asubsequent stage of design.

FIG. 5 is a top view of an embodiment of a semiconductor device.

FIG. 6 is a cross-section view of the semiconductor device of FIG. 5.

DETAILED DESCRIPTION

Embodiments of methods and semiconductor devices are disclosed hereinthat improve reliability of vias and/or improve uniformity of viaresistance by adding tiling features around the vias to improve moisturedissipation during out-gassing processes. In one embodiment, viaslocated in zones which have a covering metal density of less than apredetermined density are identified, and tiling features are addedaround these identified vias. This is better understood by reference tothe following description and the drawings.

FIG. 1 is a flow diagram of an embodiment of process 100 for determiningwhere to add metal tiles around one or more vias to improve reliabilityof a semiconductor device or integrated circuit. Process 102 includesgenerating a layout database for the semiconductor device that includesthe type, size, location and interconnections between features orcomponents such as metal layers, dielectric layers, and vias connectingthe conductive layers in the semiconductor device. Any suitable type ofintegrated circuit design tool can be used in process 102. One exampleof a commercially available tool that can be used is the IC Stationdesign system by Mentor Graphics, Inc. of Wilsonville, Oreg. Anadditional tool called Calibre by Mentor Graphics can be used tomanipulate a database for an IC designed using IC Station.

With reference with FIGS. 1 and 2, FIG. 2 is a top view of an embodimentof a partial layout of semiconductor device 200 at a first stage ofdesign. Semiconductor device 200 includes a plurality of vias 202 a, 202b, 202 c, and 202 d (collectively, “vias 202”), metal lines 204 coupledto the vias 202, and metal line 205 which is adjacent to vias 202 a and202 b. Metal lines 204 and 205 may be referred to as covering metalbecause they are located over vias 202. That is, vias 202 are coupledbetween covering metal, such as metal lines 204, and landing metal,located below vias 202. Metal line 205 is formed in the same layer asmetal lines 204, even though there may be no via coupled to it, and istherefore still referred to as part of the covering metal with respectto vias 202. Note that the covering metal may correspond to the lastmetal layer of semiconductor device 200. Using the database generated inprocess 102, process 104 includes creating or determining zones 206 a,206 b, 206 c (collectively, “zones 206”) around vias 202 within apredetermined distance around vias 202.

In the example shown, zone 206 a is a polygon shape around vias 202 a,202 b; zone 206 b is a polygon shape around via 202 c; and zone 206 c isa polygon around via 202 d. Although zones 206 are shown as polygons,zones 206 can be any suitable shape.

Vias 202 are typically created with approximately the same shape, shownas a square in FIG. 2. In some implementations, zones 206 can bedetermined by upsizing the original size of vias 202 by a suitabledistance. The particular upsize distance to determine zones 206 can bebased on the size of the components of the semiconductor device 200.Semiconductor processing technology is often referred to based on thedrawn transistor minimum gate length. For example, the term 90 nmtechnology refers to a silicon technology with a drawn transistorminimum gate length of 90-100 nm. As a further example, vias 202 in a 90mm technology semiconductor device 200 can be 0.13 micron per side andthe upsize distance can be 0.9 microns per side to form polygons thatare 1.93 microns per side.

In an alternate embodiment, zones 206 may be formed may be defined whichare no greater than 10 times, or no greater than 12 times, the minimumline pitch for the processing technology used for semiconductor device200. As used herein, pitch is the distance between centers of metallines adjacent to each other. Note that other suitable via sizes andshapes, and upsize distances for forming zones 206 can be used. Forexample, in one embodiment, zones 206 are no larger than an order ofmagnitude of twice the minimum metal feature size for the semiconductordevice. Other techniques for creating zones 206 around vias 202 can alsobe used.

Process 104 can further include presenting an image of zones 206 onsemiconductor device 200 to the user of the design system via a displaydevice. Process 104 can also interactively allow a user to add, delete,and/or resize tile zones 206 manually, if desired.

Zones 206 that overlap or touch one another can be combined into onezone. For example, larger zones 206 a was formed by combining individualzones (not shown) around respective vias 202 a/202 b because theindividual zone around vias 202 a/202 b overlapped or touched oneanother.

Process 106 includes measuring or determining the density of coveringmetal in each zone 202. For example, for zone 202 a, the portions ofmetal lines 204 and 205 within zone 202 a are used to determine thecovering metal density. For zone 206 b, the portion of metal line 204within zone 206 b is used to determine the covering metal density. Forzone 206 c, the portion of metal line 204 within zone 206 c is used todetermine the covering metal density.

Referring back to FIG. 1, process 108 includes selecting zones whichhave a density less than a predetermined density threshold. In oneembodiment, the predetermined density threshold may be 80%, such thatany zone 202 having a density less than 80% is selected. Alternatively,the predetermined density threshold may be 70%, 60%, 50%, 40%, 30%, 20%,15%, 10%, or 5%. In the embodiments herein, it will be assumed that thepredetermined density threshold is 30% such that any zone 202 having adensity of covering metal less than 30% is selected by process 108.Referring to FIG. 3, FIG. 3 is a top view of semiconductor device 200 ofFIG. 2 after a subsequent stage of design including processor 108, inwhich zone 206 b is selected. In the illustrated example, zone 206 b hasa covering metal density of less than 30% while each of zones 206 a and206 b have a covering metal density of greater than 30%. Process 108 canalso include showing selected and unselected vias 202 to the user of thedesign system via display device. In one embodiment, process 108 mayhighlight those zones which are selected. Selection of zone 202 b can beperformed in logic instructions executed by a computer processor andtherefore may not otherwise be visible to a user. Process 108 can alsointeractively allow a user to select and deselect vias manually,however, given the large number of vias that may be included in asemiconductor device, manual selection is generally not performed.

Referring to FIG. 3, selected zones 202, such as zone 206 b, can bereferred to as tiling zones 302 in which tiles will be added. In thiscase, tiling zone 302 is the same zone as selected zones 202 (such aszone 202 b). In an alternate embodiment, once a zone is selected, it maybe resized for tiling. For example, tiling zone 302 (in which tiles willbe added) may be larger or smaller than the zone used for thedetermination of covering metal density (zone 206). Furthermore, theshape of the tiling zone may also be changed. In one embodiment, animage of selected zone 302 on semiconductor device 200 may be presentedto the user of the design system via a display device. The design systemcan also interactively allow a user to add, delete, and/or resize tilingzones 302 manually, if desired.

Referring to FIGS. 1 and 4, FIG. 4 is a top view of semiconductor device200 of FIG. 3 after a subsequent stage of design including process 112in which tiling features 502 a, 502 b, 502 c (collectively, “tilingfeatures 502”) are metal tiling features inlaid in a dielectric layerabove that in which via(s) 202 are formed and within tiling zone 302(e.g. corresponding to selected zone 206 b). Tiling features 502 aretherefore added to the metal layer above the plurality of via(s) 202.Tiling features 502 are used to form a pattern for creating trenchesaround via 202 within tiling zone 302. The trenches allow out-gassing ofmore oxygen sources that can cause delamination and high via resistancethan would be possible without the trenches. Further, since metalfeatures are typically formed between dielectric layers to forminterconnects with vias 202 between metal layers, no extra processingsteps or time is required to include additional tiling features 502.

Any suitable technique or criteria can be used to determine the size,shape, position, and orientation of tiling features 502. For example,tiling features 502 may be configured to obtain a metal density that isgreater than or equal to the predetermined density threshold describedin reference to process 108. Therefore, if zones 206 are redrawn forvias 202 of semiconductor device 200 at the processing stage of FIG. 4,as was done in the processing stage of FIG. 2, the density of coveringmetal in each of zones 206 is now greater than or equal to thepredetermined density threshold. In one embodiment, the resulting metaldensity is greater than about 5 percent. In one embodiment, theresulting metal coverage in each of zones 206 after adding tilingfeatures 502 is no less than 5 percent, or no less than 3 percent, ofsurface area within the zone. Also, in one embodiment, dimensions ofpolygons used to pattern trenches for metallization around via 202 areselected such that tiling features 502 are capable of fitting into anexisting layout and meet a density goal of greater than 20% in the zone.

Tiling features 502 may be oriented along x and y directions, or at anangle. The size and shape of tiling features 502 may be selected basedon the capabilities and minimum feature size of the equipment being usedto manufacture semiconductor device 200. An example for configuringtiling features 504 for 90 mm technology can include tiling features 502that have a height of 0.14 um, and vary in width from 0.5 um to 0.8 umin increments of 0.1 um. These added tiling features 502 are added inaccordance with the design rules governing the allowed spacing to otherfeatures in the design such as metal interconnects, other tiles, andother restricted areas.

Referring to FIGS. 5 and 6, FIG. 5 is a top view of an embodiment of aportion of a semiconductor device 600 including lower dielectric layer602, a plurality of vias 604, lower level metal lines 606 (i.e. landingmetal), tiling features 608, and upper level metal lines 610 (i.e.covering metal). FIG. 6 is a cross-section view of semiconductor device600 of FIG. 5 that shows lower dielectric layer 602, a plurality of vias604, lower level metal lines 606 (i.e. landing metal 606), tilingfeatures 608 in dielectric layer 602, upper dielectric layer 702, etchstop layer 704, and anti-reflective layer 710. The portion ofsemiconductor device 600 may be built on an insulating layer formed on asemiconductor substrate (not shown). Also, tiling features 608 maycorrespond to tiling features 502 described above.

As an example, metal lines 606, 610 may be formed of copper or othersuitable conductive material. Etch stop layer 704 may be formed ofsilicon carbon nitride (SiCN) having a thickness ranging from 200-600Angstroms. Dielectric layer 602 may be formed of SiCOH with a thicknessranging from 4000 to 6000 Angstroms. Dielectric layer 702 may be formedof tetra-ethoxy-silane (TEOS) having a thickness ranging from 700-1300Angstroms. Anti-reflective layer 710 may be formed of silicon richsilicon nitride (SRN) having a thickness ranging from 400 to 700Angstroms, or silicon rich silicon oxynitride (SRON) having a thicknessranging from 250 to 500 Angstroms. Other suitable thicknesses andmaterials may be used, however.

Interconnect delay is a major limiting factor in the effort to improvethe speed and performance of integrated circuits (ICs). One way tominimize interconnect delay is to reduce interconnect capacitance byusing low-k materials during production of the ICs. Such low-k materialshave also proven useful for low temperature processing. Low-k materialshave been developed to replace relatively high dielectric constantinsulating materials, such as silicon dioxide. In particular, low-kfilms are being utilized for inter-level and intra-level dielectriclayers between metal layers of semiconductor devices. Additionally, inorder to further reduce the dielectric constant of insulating materials,material films are formed with pores, i.e., porous low-k materials.

Accordingly, dielectric layer 602 can, for example, contain SiCOH, whichis a low-k dielectric material. Low-k dielectric materials have anominal dielectric constant less than the dielectric constant of SiO2,which is approximately 4 (e.g., the dielectric constant for thermallygrown silicon dioxide can range from 3.8 to 3.9). High-k materials havea nominal dielectric constant greater than the dielectric constant ofSiO2. Low-k dielectric materials may have a dielectric constant of lessthan 3.7, or a dielectric constant ranging from 1.6 to 3.7. Low-kdielectric materials can include fluorinated silicon glass (FSG), carbondoped oxide, a polymer, a SiCOH-containing low-k material, a non-porouslow-k material, a porous low-k material, a spin-on dielectric (SOD)low-k material, or any other suitable dielectric material.

Examples of two materials found suitable for low-K dielectrics are PECVDSiCOH dielectrics formed with either TMCTS (or OMCTS precursors). Aprecursor is a material which contains the SiCOH molecules in a largercarrier molecule which flows in a plasma chemical vapor depositionsystem for depositing the dielectric film. These films have manydesirable characteristics but, as deposited, have residual OH(hydroxyl), and H2O (water) which require out-gassing. Out-gassing is aprocess during which semiconductor device 600 is heated at a specifiedtemperature for a specified duration of time to allow the moisture inlow-K dielectric layer 602 to dissipate.

Dielectric layer 702 may also provide a waterproof barrier that preventsmoisture from seeping into as well as out of dielectric layer 602. Ifdielectric layer 702 is formed before substantially all of the moistureis out-gassed from dielectric layer 602, residual oxygen sources couldreact with metal in vias 202 and layers 606, 610 to form oxides thatcauses delamination between metal layers 606, 610 and dielectric layers602, 702, as well as create high via resistance. Areas with higher viadensity provide more exposed surface area of dielectric layer 602through which moisture can evaporate. Moisture can be trapped in areaswith low via density however. Accordingly, placing tiling features 608(which may correspond to tiling features 502 described above) aroundisolated vias 604 allows greater dissipation of residual oxygen (e.g.,OH (hydroxyl) and H2O (water)) in dielectric layer 602 duringout-gassing process steps prior to metal forming steps as semiconductordevice 600 is manufactured.

By now it should be appreciated that there has been provided asemiconductor device having improved via reliability. Therefore, byidentifying zones around vias in which the density of the covering metalis less than a predetermined density threshold, tiling features can beadded in these identified zones in order to increase the density of thecovering metal. In this manner, moisture dissipation during out-gassingprocesses may be reduced.

Process 100 can be performed by executing program logic instructions ona general purpose computer, such as a workstation coupled to a mainframecomputer, and/or a desktop, laptop, tablet, or notebook computer. Theterm “program,” as used herein, is defined as a sequence of instructionsdesigned for execution on a computer system. A program, or computerprogram, may include a subroutine, a function, a procedure, an objectmethod, an object implementation, an executable application, an applet,a servlet, a source code, an object code, a shared library/dynamic loadlibrary and/or other sequence of instructions designed for execution ona computer system.

Furthermore, those skilled in the art will recognize that boundariesbetween the functionality of the above described processes and methodsare merely illustrative. The functionality of multiple operations may becombined into a single operation, and/or the functionality of a singleoperation may be distributed in additional operations. Moreover,alternative embodiments may include multiple instances of a particularoperation, and the order of operations may be altered in various otherembodiments.

A computer system processes information according to a program andproduces resultant output information via I/O devices. A program is alist of instructions such as a particular application program and/or anoperating system. A computer program is typically stored internally oncomputer readable storage medium or transmitted to the computer systemvia a computer readable transmission medium. A computer processtypically includes an executing (running) program or portion of aprogram, current program values and state information, and the resourcesused by the operating system to manage the execution of the process. Aparent process may spawn other, child processes to help perform theoverall functionality of the parent process. Because the parent processspecifically spawns the child processes to perform a portion of theoverall functionality of the parent process, the functions performed bychild processes (and grandchild processes, etc.) may sometimes bedescribed as being performed by the parent process.

Although the disclosure is described herein with reference to specificembodiments, various modifications and changes can be made withoutdeparting from the scope of the present disclosure as set forth in theclaims below. For example, the structure was described as adding aconductive line under the dangling via, the described approach is alsoapplicable to the situation in which the added conductive line over thedangling via. Accordingly, the specification and figures are to beregarded in an illustrative rather than a restrictive sense, and allsuch modifications are intended to be included within the scope of thepresent disclosure. Any benefits, advantages, or solutions to problemsthat are described herein with regard to specific embodiments are notintended to be construed as a critical, required, or essential featureor element of any or all the claims.

The term “coupled,” as used herein, is not intended to be limited to adirect coupling or a mechanical coupling.

Furthermore, the terms “a” or “an,” as used herein, are defined as oneor more than one. Also, the use of introductory phrases such as “atleast one” and “one or more” in the claims should not be construed toimply that the introduction of another claim element by the indefinitearticles “a” or “an” limits any particular claim containing suchintroduced claim element to disclosures containing only one suchelement, even when the same claim includes the introductory phrases “oneor more” or “at least one” and indefinite articles such as “a” or “an.”The same holds true for the use of definite articles.

Unless stated otherwise, terms such as “first” and “second” are used toarbitrarily distinguish between the elements such terms describe. Thus,these terms are not necessarily intended to indicate temporal or otherprioritization of such elements.

The following are various embodiments of the present invention.

Item 1 includes a method for tiling selected vias in a semiconductordevice having a plurality of vias, and the method includes generating alayout database for the semiconductor device; creating zones around theplurality of vias; measuring density of covering metal in each zone;selecting a low density zone as being a zone that has a metal densityless than a threshold metal density; and adding at least one tilingfeature on a metal layer above the plurality of vias in the low densityzone so that metal density of the low density zone increases to at leastthe same as the threshold metal density. Item 2 includes the method ofitem 1, wherein identifying low density zones further includes creatingthe zones by upsizing the plurality of vias. Item 3 includes the methodof item 1, wherein adding tiling features on a metal layer, furthercomprises the metal layer being an inlaid metal layer. Item 4 includesthe method of item 1, wherein the creating zones includes upsizing thevias a predetermined amount based on an original size of the vias. Item5 includes the method of item 1, wherein creating zones includesdefining the zones to have a dimension no larger than an order ofmagnitude of twice the minimum metal feature size for the semiconductordevice. Item 6 includes the method of item 1, wherein adding the tilingfeature further includes adding tiling features to obtain a metalcoverage of no less than 3 percent of surface area within the zone. Item7 includes the method of item 1, wherein the method is performed forinterlevel dielectric layers of the semiconductor device comprising alow-k oxide. Item 8 includes the method of item 1, wherein creating thezones around the vias further includes upsizing the vias by 0.9 micronsper side.

Item 9 includes method for tiling selected vias in a semiconductordevice having a plurality of vias, and the method includes generating alayout database for the semiconductor device; creating a plurality ofzones by upsizing the plurality of vias; disregarding zones of theplurality of zones that have more than a threshold metal density asbeing not low density zones; selecting zones in remaining zones as beinglow density zones; and adding at least one tiling feature on a metallayer in each of the low density zones. Item 10 includes the method ofitem 9 wherein creating the plurality of zones further includes definingthe zones as being no larger than an order of magnitude of twice theminimum metal feature size for the semiconductor device. Item 11includes the method of item 9 and further includes selecting dimensionsof polygons used to pattern trenches for metallization such that the atleast one tiling feature is capable of fitting into an existing layoutand meet a density goal of greater than 20% in the remaining zones. Item12 includes the method of item 9, wherein creating the plurality ofzones further includes sizing the zones to be no greater than twelvetimes a minimum pitch between metal lines for the semiconductor device.Item 13 includes the method of item 9, wherein adding at least onetiling feature further includes adding tiling features to obtain a metalcoverage of no less than five percent of surface area within theremaining zones. Item 14 includes the method of item 9, wherein themethod is performed for interlevel dielectric layers of thesemiconductor device comprising a low-k oxide.

Item 15 includes a semiconductor device having a first insulating layer;a first metal conductor layer formed over the first insulating layer; asecond insulating layer comprising a low-k insulating material formedover the first metal conductor; a second metal conductor layer formedover the second insulating layer; vias formed in the second insulatinglayer connecting the first metal conductor layer to the second metalconductor layer; and a plurality of trenches, formed in the secondinsulating layer so that predetermined areas around each of the viasmeets a minimum metal density, wherein the plurality of trenchesprovides moisture venting for the via. Item 16 includes thesemiconductor device of item 15, wherein a low-k insulating material isan insulating material having a relative permittivity of less than about3.9. Item 17 includes the semiconductor device of item 15, wherein themoisture is vented during a heating step of the semiconductor device.Item 18 includes the semiconductor device of item 15, wherein theplurality of trenches further include a metal. Item 19 includes thesemiconductor device of item 15, wherein the predetermined areas are nolarger than an order of magnitude of twice the minimum metal featuresize of the semiconductor device. Item 20 includes the semiconductordevice of item 15, wherein metal density within the predetermined areasis greater than about five percent.

What is claimed is:
 1. A method for tiling selected vias in asemiconductor device having a plurality of vias, the method comprising:generating a layout database for the semiconductor device; creatingzones around the plurality of vias; measuring density of covering metalin each zone; selecting a low density zone as being a zone that has ametal density less than a threshold metal density; and adding at leastone tiling feature on a metal layer above the plurality of vias in thelow density zone so that metal density of the low density zone increasesto at least the same as the threshold metal density.
 2. The method ofclaim 1, wherein identifying low density zones further comprises:creating the zones by upsizing the plurality of vias.
 3. The method ofclaim 1, wherein adding tiling features on a metal layer, furthercomprises the metal layer being an inlaid metal layer.
 4. The method ofclaim 1, wherein the creating zones comprises upsizing the vias apredetermined amount based on an original size of the vias.
 5. Themethod of claim 1, wherein creating zones comprises defining the zonesto have a dimension no larger than an order of magnitude of twice theminimum metal feature size for the semiconductor device.
 6. The methodof claim 1, wherein adding the tiling feature further comprises addingtiling features to obtain a metal coverage of no less than 3 percent ofsurface area within the zone.
 7. The method of claim 1, wherein themethod is performed for interlevel dielectric layers of thesemiconductor device comprising a low-k oxide.
 8. The method of claim 1,wherein creating the zones around the vias further comprises upsizingthe vias by 0.9 microns per side.
 9. A method for tiling selected viasin a semiconductor device having a plurality of vias, the methodcomprising: generating a layout database for the semiconductor device;creating a plurality of zones by upsizing the plurality of vias;disregarding zones of the plurality of zones that have more than athreshold metal density as being not low density zones; selecting zonesin remaining zones as being low density zones; and adding at least onetiling feature on a metal layer in each of the low density zones. 10.The method of claim 9 wherein creating the plurality of zones furthercomprises defining the zones as being no larger than an order ofmagnitude of twice the minimum metal feature size for the semiconductordevice.
 11. The method of claim 9, further comprising selectingdimensions of polygons used to pattern trenches for metallization suchthat the at least one tiling feature is capable of fitting into anexisting layout and meet a density goal of greater than 20% in theremaining zones.
 12. The method of claim 9, wherein creating theplurality of zones further comprises sizing the zones to be no greaterthan twelve times a minimum pitch between metal lines for thesemiconductor device.
 13. The method of claim 9, wherein adding at leastone tiling feature further comprises adding tiling features to obtain ametal coverage of no less than five percent of surface area within theremaining zones.
 14. The method of claim 9, wherein the method isperformed for interlevel dielectric layers of the semiconductor devicecomprising a low-k oxide.
 15. A semiconductor device comprising: a firstinsulating layer; a first metal conductor layer formed over the firstinsulating layer; a second insulating layer comprising a low-kinsulating material formed over the first metal conductor; a secondmetal conductor layer formed over the second insulating layer; viasformed in the second insulating layer connecting the first metalconductor layer to the second metal conductor layer; and a plurality oftrenches, formed in the second insulating layer so that predeterminedareas around each of the vias meets a minimum metal density, wherein theplurality of trenches provides moisture venting for the via.
 16. Thesemiconductor device of claim 15, wherein a low-k insulating material isan insulating material having a relative permittivity of less than about3.9.
 17. The semiconductor device of claim 15, wherein the moisture isvented during a heating step of the semiconductor device.
 18. Thesemiconductor device of claim 15, wherein the plurality of trenchesfurther comprise a metal.
 19. The semiconductor device of claim 15,wherein the predetermined areas are no larger than an order of magnitudeof twice the minimum metal feature size of the semiconductor device. 20.The semiconductor device of claim 15, wherein metal density within thepredetermined areas is greater than about five percent.